This project, a collaboration with MIT-Lincoln Laboratory, targets the development of nitride-based hot electron transistors as discrete compact, high-power amplifiers. By using novel epitaxial designs, leading to collimated electron injection into  an ultra-narrow polarization-doped base, together with low-damage etching for base contacts, HETs with record current handling and high gain were recently developed.

Funding agencies:
Lincoln Scholars program

Key students and post-docs:
Jeff Daulton (Brown current EE PhD student, Zaslavsky group)