This project, a collaboration with David Paine’s group in Materials Engineering at Brown, with modeling and electron microscopy support from Technion, initially focused on amorphous indium-zinc-oxide (a-IZO) thin film transistors (TFTs). High-performance top-gated n-type TFTs were fabricated, with excellent channel electron field-effect mobilities of ~100 cm²/Vs, high on-off ratios, and nearly ideal subthreshold slopes of ~62 mV/decade. We subsequently focused on p-type TFTs based on copper iodide material, but were largely stymied by the reactivity and instability of CuI.

Funding agencies:
NSF DMR-1904633
NSF DMR-1409590

Key students and post-docs:
Yang Song (Brown PhD Physics 2017)