Publications
Google Scholar Profile
2010 – 2019
Epitaxial Silicon Dots Self-Assembled on Aluminum Nitride / Si(111), Y. Cheng and R. Beresford, Nano Lett. 13, 614 (2013). full text
Growth of AlN/SiC/AlN quantum wells on Si(111) by molecular beam epitaxy, Y. Cheng and R. Beresford, Appl. Phys. Lett. 100, 232112 (2012). full text
Evaluation of Metal-Nanowire Electrical Contacts by Measuring Contact End Resistance, H. Park, R. Beresford, R. Ha, H.-J. Choi, H. Shin, and J. Xu, Nanotechnology 23, 245201 (2012). full text
Gas-Assisted Focused Ion Beam Fabrication of Gold Nanoelectrode Arrays in Electron-Beam Evaporated Alumina Films for Biosensing Applications, N. Triroj, P. Jaroenapibal, and R. Beresford, 14th International Meeting on Chemical Sensors (2012). full text
Microfluidic Chip-Based Nanoelectrode Array as Miniaturized Biochemical Sensing Platform for Prostate-Specific Antigen Detection, N. Triroj, P. Jaroenapibal, H. Shi, J.I. Yeh and R. Beresford, Biosensors and Bioelectronics 26, 2927 (2011). full text
Effects of Electrical Contacts on the Photoconductive Gain of Nanowire Photodetectors, H. Park, J. H. Kim, R. Beresford, and J. Xu, Appl. Phys. Lett. 99, 143110 (2011). full text
Geometry- and Size-Dependence of Electrical Properties of Metal Contacts on Semiconducting Nanowires, H. Park, R. Beresford, S. Hong, and J. Xu, J. Appl. Phys. 108, 094308 (2010). full text
2000 – 2009
Fabrication and Optical Characterization of Highly Ordered InAs/GaAs Quantum Dots on Nonlithographically Patterned Substrates, R.S. Guico, M. Tzolov, W. Guo, S.G. Cloutier, R. Beresford, and J. Xu, J. Vac. Sci. Technol. B 25, 1093 (2007). full text
Kinetic Monte Carlo Simulation of InAs Quantum Dot Growth on Nonlithographically Patterned Substrates, W. Guo, R. S. Guico, J. M. Xu, and R. Beresford, J. Vac. Sci. Technol. B 25, 1072 (2007). full text
Characterization of Metamorphic InxAl1–xAs/GaAs Buffer Layers Using Reciprocal Space Mapping, D. Lee, M.S. Park, Z. Tang, H. Luo, R. Beresford, and C.R. Wie, J. Appl. Phys. 101, 063523 (2007). full text
Conserved Flux in Interband Tunneling, R. Beresford, Solid State Electronics 51, 136 (2007). full text
High-Mobility Amorphous In2O3–10 wt% ZnO Thin Film Transistors, B. Yaglioglu, H. Y. Yeom, R. Beresford, and D. C. Paine, Appl. Phys. Lett. 89, 062103 (2006). full text
Microfluidic Three-Electrode Cell Array for Low-Current Electrochemical Detection, N. Triroj, M.A. Lapierre-Devlin, S.O. Kelley, and R. Beresford, IEEE Sensors Journal 6, 1395 (2006). full text
Mobile Dislocation Density and Strain Relaxation Rate Evolution During InxGa1–xAs/GaAs Heteroepitaxy, C. Lynch, E. Chason, and R. Beresford, J. Appl. Phys. 100, 013525 (2006). full text
Growth of Highly Ordered Relaxed InAs/GaAs Quantum Dots on Non-lithographically Patterned Substrates by Molecular Beam Epitaxy, W. Guo, R.S. Guico, R. Beresford, and J.M. Xu, J. Crystal Growth 287, 509 (2006). full text
Carbon Nanotube Gated Lateral Resonant Tunneling Field-Effect Transistors, D.P. Wang, B.R. Perkins, A.J. Yin, A. Zaslavsky, J.M. Xu, R. Beresford, and G. L. Snider, Appl. Phys. Lett. 87, 152102 (2005). full text
Limits of Strain Relaxation in InGaAs/GaAs Probed in Real Time by In Situ Wafer Curvature Measurement, C. Lynch, E. Chason, R. Beresford, L.B. Freund, K. Tetz, and K.W. Schwarz, J. Appl. Phys. 98, 073532 (2005). full text
Response to “Comment on ‘A growth pathway for highly ordered quantum dot arrays’ ” [Appl. Phys. Lett. 86, 206101 (2005)] , R. Beresford and J. M. Xu, Appl. Phys. Lett. 86, 206102 (2005). full text
Enhanced Strain Relaxation Rate of InGaAs by Adatom-Assisted Dislocation Kink Nucleation, C. Lynch, E. Chason, and R. Beresford, J. Vac. Sci. Technol. B 23, 1166 (2005). full text
Competition Between Tensile and Compressive Stress Mechanisms during Volmer-Weber Growth of Aluminum Nitride Films, B.W. Sheldon, A. Rajamani, A. Bhandari, E. Chason, S.K. Hong, and R. Beresford, J. Appl. Phys. 98, 043509 (2005). full text
The Fabrication and Characterization of Amorphous Indium Zinc Oxide (In2O3–10 wt% ZnO) Based Thin Film Transistors, R. Beresford, D. Paine, B. Yaglioglu, and H. Yeom, MRS Proceedings 905, 19 (2005).
A Growth Pathway for Highly Ordered Quantum Dot Arrays, J. Liang, H. Luo, R. Beresford, and J.M. Xu, Appl. Phys. Lett. 85, 5974 (2004). full text
Full-Zone k.p Method of Band Structure Calculation for Wurtzite Semiconductors, R. Beresford, J. Appl. Phys. 95, 6216 (2004). full text
Real-Ttime Stress Evolution during Growth of InxAl1–xAs/GaAs Metamorphic Buffer Layers, C. Lynch, R. Beresford, and E. Chason, J. Vac. Sci. Technol. B 22, 1539 (2004). full text
Influence of Growth Flux and Surface Superaturation on InGaAs/GaAs Strain Relaxation, C. Lynch, E. Chason, R. Beresford, and S.K. Hong, Appl. Phys. Lett. 84 1085 (2004). full text
Analysis of the Thin-Oxide Growth Kinetic Equation, R. Beresford, Semicond. Sci. Technol. 18, 973 (2003). full text
Nanoheteroepitaxy of GaN on a Nanopore Array Si Surface, J. Liang, S.-K. Hong, N. Kouklin, R. Beresford, and J. M. Xu, Appl. Phys. Lett. 83, 1752 (2003). full text
Intrinsic Compressive Stress in Polycrystalline Films with Negligible Grain Boundary Diffusion, B.W. Sheldon, A. Ditkowski, R. Beresford, E. Chason, and J. Rankin, J. Appl. Phys. 94, 948 (2003). full text
Kinetics of Dislocation-Mediated Strain Relaxation in InGaAs/GaAs Heteroepitaxy, R. Beresford, C. Lynch, and E. Chason, J. Crystal Growth 251, 106 (2003). full text
Dislocation Structure and Relaxation Kinetics in InGaAs/GaAs Heteroepitaxy, C. Lynch, E. Chason, R. Beresford, E.B. Chen, and D.C. Paine, J. Vac. Sci. Technol. B 20, 1247 (2002). full text
Intrinsic Stress Evolution in Aluminum Nitride Thin Films and the Influence of Multistep Processing, A. Rajamani, R. Beresford, and B.W. Sheldon, Appl. Phys. Lett. 79, 3776 (2001). full text
Metastability of InGaAs/GaAs Probed by In Situ Optical Stress Sensor, R. Beresford, K. Tetz, J. Yin, E. Chason, and M.U. González, J. Vac. Sci. Technol. B 19, 1572 (2001). full text
Real-Time Measurements of Stress Relaxation in InGaAs/GaAs, R. Beresford, J. Yin, K. Tetz, and E. Chason, J. Vac. Sci. Technol. B 18, 1431 (2000). full text
1990 – 1999
In Situ Measurements of Stress Relaxation During Strained Layer Heteroepitaxy, E. Chason, J. Yin, K. Tetz, R. Beresford, L. Freund, M. Gonzalez, and J. Floro, MRS Proceedings, 583, 167 (1999). full text
A Study of Low Temperature Crystallization of Amorphous Thin Film Indium Tin Oxide, D.C. Paine, T. Whitson, D. Janiac, R. Beresford, C. Ow-Yang, and B. Lewis, J. Appl. Phys. 85, 8445 (1999). full text
Microstructure and Composition of InAsN Alloys Grown by Plasma-Source Molecular Beam Epitaxy, R. Beresford, K.S. Stevens, and A.F. Schwartzman, J. Vac. Sci. Technol. B 16, 1293 (1998). full text
Investigation of the Annealing Texture Evolution in Hafnium, R. Bai, C.L. Briant, D.C. Paine, and J.R. Beresford, Metallurgical and Mat. Trans. A 29, 757 (1998). abstract
The Effect of the III/V Ratio and Substrate Temperature on the Morphology and Properties of GaN- and AlN-Layers Grown by Molecular Beam Epitaxy on Si(111), M.A. Sanchez-Garcia, E. Calleja, E.Monroy, F.J. Sanchez, F.Calle, E. Munoz, and R. Beresford, J. Cryst. Growth 183, 23 (1998). full text
Exciton and Donor-Acceptor Recombination in Undoped GaN on Si(111), F. Calle, F.J. Sanchez, J.M.G. Tijero, M.A. Sanchez-Garcia, E. Calleja, and R. Beresford, Semicond. Sci. Technol. 12, 1396 (1997). full text
High Growth Rate (0.8 mm/hr) of GaN in Plasma‑Source Molecular Beam Epitaxy, R. Beresford, K.S. Stevens, Q. Cui, and H. Cheng, Proc. Mater. Res. Soc. 449, 361 (1997).
Feasibility of the Synthesis of AlAsN and GaAsN Films by Plasma‑Source Molecular Beam Epitaxy, G. Mendoza‑Diaz, K.S. Stevens, A.F. Schwartzman, and R. Beresford, J. Cryst. Growth 178, 45 (1997). full text
Group IV‑B Refractory Metal Crystals as Lattice‑Matched Substrates for Growth of the Group III Nitrides by Plasma‑Source Molecular Beam Epitaxy, R. Beresford, D.C. Paine, and C.L. Briant, J. Cryst. Growth 178, 189 (1997). full text
Epitaxial Growth of GaN on Lattice‑Matched Hafnium. Substrates, R. Beresford, K.S. Stevens, C. Briant, R. Bai, and D.C. Paine, Proc. Mater. Res. Soc. 395, 55 (1996). full text
Problems and Prospects in the Analysis of Epitaxial Growth of the Wide Bandgap Group III Nitrides, R. Beresford, Computational Mater. Sci. 6, 113 (1996). full text
Material and Device Characteristics of MBE-Grown GaN Using a New rf Plasma Source, R. Beresford, K. Stevens, Q. Cui, A. Schwartzman, and H. Cheng, MRS Proceedings 449, 361 (1996). full text
Downstream Ion Drift in an Electron Cyclotron Resonance Plasma Process, R. Beresford, J. Appl. Phys. 79, 1292 (1996). full text
Optical and Electrical Characterization of GaN Layers Grown on Silicon and Sapphire Substrates, M.A. Sanchez‑Garcia, F.J. Sanchez, F. Calle, E. Munoz, E. Calleja, K.S. Stevens, M. Kinniburgh, R. Beresford, and P. Gibart, Solid State Electronics 40, 81 (1996). full text
Photoconductive Ultraviolet Sensor Using Mg‑Doped GaN on Si(111), K.S. Stevens, M. Kinniburgh, and R. Beresford, Appl. Phys. Lett. 66, 3518 (1995). full text
Demonstration of a Silicon Field‑Effect Transistor Using AlN as the Gate Dielectric, K.S. Stevens, M. Kinniburgh, A. Ohtani, A.F. Schwartzman, and R. Beresford, Appl. Phys. Lett. 66, 3179 (1995). full text
Influence of Substrate Electrical Bias on the Growth of GaN in Plasma‑Assisted Epitaxy, R. Beresford, A. Ohtani, K.S. Stevens, and M. Kinniburgh, J. Vac. Sci. Technol. B 13, 792 (1995). full text
Analysis and Optimization of the Electron Cyclotron Resonance Plasma for Nitride Epitaxy, A. Ohtani, K.S. Stevens, M. Kinniburgh, and R. Beresford, J. Cryst. Growth. 150, 902 (1995). full text
Microstructure of AlN on Si (111) Grown by Plasma‑Assisted Molecular Beam Epitaxy, K.S. Stevens, A. Ohtani, M. Kinniburgh, and R. Beresford, Appl. Phys. Lett. 65, 321 (1994). full text
Microstructure and Photoluminescence of GaN Grown on Si (111) by Plasma‑Assisted Molecular Beam Epitaxy, A. Ohtani, K.S. Stevens, and R. Beresford, Appl. Phys. Lett. 65, 61 (1994). full text
Envelope Functions for a Three‑Band Semiconductor in a Uniform Electric Field, R. Beresford, Phys. Rev. B 49, 13663 (1994). full text
Growth and Characterization of GaN on Si (111), A. Ohtani, K.S. Stevens, and R. Beresford, Proc. Mater. Res. Soc. 339, 471 (1994).
Wide Bandgap Nitride Components for Silicon-Based Integrated Ultraviolet Photodetection, K.S. Stevens, M. Kinniburgh, A. Ohtani, M. Hovinen, and R, Beresford, 52nd Annual Device Research Conference (1994). abstract
Growth of Group III Nitrides on Si (111) by Plasma‑Assisted Molecular Beam Epitaxy, K.S. Stevens, A. Ohtani, A.F. Schwartzman, and R. Beresford, J. Vac. Sci. Technol. B 12, 1186 (1994). full text
Growing GaN by Plasma‑Assisted Molecular Beam Epitaxy, R. Beresford, Minerals, Metals, and Materials Soc. 46, 54 (1994).
Exact Eigenfunctions of a Two‑Band Semiconductor in a Uniform Electric Field, R. Beresford, Semiconductor Sci. and Technol. 8, 1957 (1993). full text
Intersubband Transitions in Piezoelectric Superlattices, G. Brozak, B.V. Shanabrook, D. Gammon, D.A. Broido, R. Beresford, and W.I. Wang, Surf. Sci. 267, 120 (1992). full text
Effects of Nonparabolicity on Collective Intersubband Excitations, G. Brozak, B.V. Shanabrook, D. Gammon, D.A. Broido, R. Beresford, and W.I. Wang, Phys. Rev. B 45, 11399 (1992). full text
Statistical Properties of an Ideal Nonparabolic: Fermi Gas, R. Beresford, J. Appl. Phys. 70, 6834 (1991). full text
Analytical Approximations for the Fermi Energy of an Ideal Fermi Gas Obeying a Nonparabolic Dispersion Relation, R. Beresford, J. Appl. Phys. 70, 5156 (1991). full text
Resonant Interband Coupling in Single‑Barrier Heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb, L.F. Luo, R. Beresford, and W.I. Wang, J. Appl. Phys. 68, 2854 (1990). full text
A Complementary Heterostructure Field‑Effect Transistor Technology Based on InAs/AlSb/GaSb, K.F. Longenbach, R. Beresford, and W.I. Wang, IEEE Trans. on Electron Devices 37, 2265 (1990). full text
Optically Induced Variability of the Strain Induced Electric Fields in (111) GaSb/AlSb Quantum Wells, B.V. Shanabrook, D. Gammon, R. Beresford, W.I. Wang, R.P. Leavitt, and D.A. Broido, Superlatt. Microstruct. 7, 363 (1990). full text
Application of Dual‑Gate and Split‑Gate Field‑Effect Transistor Designs to InAs Field Effect Transistors, K.F. Longenbach, R. Beresford, and W.I. Wang, Solid State Electronics 33, 1211 (1990). full text
Narrow Gap InAs for Heterostructure Tunneling, R. Beresford, L.F. Luo, and W.I. Wang, Semiconductor Science and Technology 5, 195 (1990). full text
Surface Structures of the (Al, Ga)Sb System, J. Piao, R. Beresford, and W.I. Wang, J. Vac. Sci. Technol. B 8, 276 (1990). full text
MBE Growth of Metastable Ge‑Sn Alloys, J. Piao, R. Beresford, W.I. Wang, and H. Homma, J. Vac. Sci. Technol. B 8, 221 (1990). full text
Interband Tunneling through Single‑Barrier InAs/AlSb/GaSb Heterostructures, R. Beresford, L.F. Luo, K.F. Longenbach, and W.I. Wang, Appl. Phys. Lett. 56, 952 (1990). full text
Resonant Interband Tunneling Device with Multiple Negative Differential Resistance Regions, R. Beresford, L.F. Luo, K.F. Longenbach, and W.I. Wang, Electron Device Lett. 11, 110 (1990). full text
Interband Resonant Tunneling through a 110‑nm InAs Quantum Well, R. Beresford, L.F. Luo, and W.I. Wang, Appl. Phys. Lett. 56, 551 (1990). full text
Magnetoresistance Measurements of Doping Symmetry and Strain Effects in GaSb/AlSb Quantum Wells, W. Hansen, T.P. Smith III, J. Piao, R. Beresford, and W.I. Wang, Appl. Phys. Lett. 56, 81 (1990). full text
1980 – 1989
Polytype Heterostructures for Electron Tunneling Devices, R. Beresford, L.F. Luo, K. Longenbach, and W.I. Wang, Digest of Technical Papers, 1989 International Electron Devices Meeting, Washington D.C., December 3‑6, 1989.
Interband Tunneling in Polytype Heterostructures, L.F. Luo, R. Beresford, and W.I. Wang, Appl. Phys. Lett. 55, 2023 (1989). full text
Band Structure Engineering for Electron Tunneling in Heterostructures, R. Beresford, L.F. Luo, and W.I. Wang, IEEE Trans. on Electron Devices 36, 2618 (1989). full text
Resonant Tunneling through X‑Valley States in GaAs/AlAs/GaAs Single‑Barrier Heterostructures, R. Beresford, L.F. Luo, W.I. Wang, and E.E. Mendez, Appl. Phys. Lett. 55, 1555 (1989). full text
Heterojunction Field‑Effect Transistors Based on AlGaSb/InAs, L.F. Luo, R. Beresford, W.I. Wang, and H. Munekata, Appl. Phys. Lett. 55, 789 (1989). full text
Resonant Tunneling of Holes in AlSb/GaSb/AlSb Double‑Barrier Heterostructures, R. Beresford, L.F. Luo, and W.I Wang, Appl. Phys. Lett. 55, 694 (1989). full text
Inelastic Tunneling in (111) Oriented AlAs/GaAs/AlAs Double‑Barrier Heterostructures, L.F. Luo, R. Beresford, W.I. Wang, and E.E. Mendez, Appl. Phys. Lett 54, 2133 (1989). full text
Negative Differential Resistance in AlGaSb/InAs Single‑Barrier Heterostructures at Room Temperature, R. Beresford, L.F. Luo, and W.I. Wang, Appl. Phys. Lett. 54, 1899 (1989). full text
Resonant Tunneling in AlSb/InAs/AlSb Double‑Barrier Heterostructures, L.F. Luo, R. Beresford, and W.I. Wang, Appl. Phys. Lett. 53, 2320 (1988). full text
High‑Speed Split‑Emitter I2L/MTL Memory Cell, S.K. Wiedmann, D.D. Tang, and R. Beresford, IEEE J. Solid State Circuits 16, 429 (1981). full text
