Zaslavsky Research Lab

Brown University



Welcome to the Laboratory of Prof. Alex Zaslavsky in the Brown School of Engineering, working on semiconductor device physics and engineering.  As silicon technology marches on towards ultimately scaled devices, we are pursuing alternative or complementary technologies based on either different physical mechanisms (such as tunneling, hot-electron effects, or superconductivity), different materials (Ge, III-V materials, amorphous conducting oxides), or different geometries (nanowires, quantum dots, ultrathin SOI).  Current projects include:

  • Cryo-CMOS and magnetic sensing (with Xiao lab at Brown, Tufts, NIST-Gaithersburg, CoolCAD Electronics, and MIT-Lincoln Laboratory)
  • Germanium quantum dot photodetectors (with Pacifici lab at Brown)
  • Nitride hot electron and tunneling transistors (with MIT-Lincoln Laboratory)

In the past our group worked in other areas, including:

  • Amorphous indium-zinc-oxide and copper-iodide devices (with Paine lab at Brown and with Technion, Israel)
  • Tunneling and band-modulation devices in SOI (collaboration with INP-Grenoble/Minatec and Fudan University)
  • Noise-immune ultimate CMOS design (with Iris Bahar’s lab then at Brown)
  • Si and SiGe nanowire tunneling transistors (collaboration with LANL)
  • Carbon nanotube devices (with Xu lab at Brown)
  • Flexible metal interconnects (with Greg Crawford’s lab then at Brown)
  • Magnetotunneling in 2DEG and Si/Ge (with IBM Yorktown and SUNY-Stony Brook)

Alumni of the Zaslavsky laboratory — our most significant product by far — are well-equipped for future semiconductor device R&D by acquiring a full skill set, from device fabrication to characterization and modeling.  They have moved on to a range of semiconductor companies (from Micron to Applied Materials, to GlobalFoundries, to Synopsys), government labs (from NIST to CNRS to Paul Scherrer Institute), and major industrial companies (like EMC and Apple).

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