This project was a longstanding collaboration with Sorin Cristoloveanu’s group at INP-Grenoble, Serge Luryi at SUNY-Stony Brook, and Supratik Guha at IBM Research, with CMOS silicon-on-insulator (SOI) technology supported by LETI-CEA and GeOI technology by IBM Research.  We studied various CMOS-compatible TFET and band modulation devices built in thin SOI.  We fabricated one of the first SOI TFETs back in 2004 and continued to work on TFETs and band modulation Z²-FETs (for zero slope and zero impact ionization) for nearly two decades. We also worked on GeOI device possibilities.   We published a large number of device papers, including a highly-cited 2016 review paper on sharp-switching devices that summarized many of our results.

Funding agencies:
Nanosciences Foundation of Grenoble
NSF ECCS-1068895
NSF ECCS-0701635
AFOSR F49620-00-1-0331

Key students and post-docs:
Jing Wan (INP-Grenoble PhD EE 2012)
Dimitris Kazazis (Brown PhD EE 2009)
Cagri Aydin (Brown PhD Physics 2004)