By year with pdf files where available

2024
163. P. R. Shrestha, A. Zaslavsky, V. O. Jimenez, J. Campbell, and C. A. Richter, “Impact-ionization-based high-endurance one-transistor bulk CMOS cryo-memory”, submitted to J. Electron Dev. Soc. (2024).
162. A. Zaslavsky, P. R. Shrestha, V. O. Jimenez, J. P. Campbell, and C. A. Richter, “High-endurance bulk CMOS one-transistor cryo-memory”, submitted to Solid State Electronics (2024).
161. Z. C. Adamson, R. Zilberberg, I. Polishchuk, N. Thomas, K. Kim, A. Katsman, B. Pokroy, A. Zaslavsky, and D. C. Paine, “Sputter-deposited copper iodide thin film transistors with low operating voltage”, Solid State Electronics 221-222, 109014 (2024).
160. A. Li, T. Zeng, L. Zhang, J. Riem, G. C. Adam, D. L. Fleischer, A. Zaslavsky, W. R. Patterson, T. Ansell, A. Akturk, B. D. Hoskins, P. R. Shrestha, and M. Saligane, “Unlocking circuits for quantum with open source silicon: A first look at measured open source silicon results at 4 K”, IEEE Solid-State Circ. Magazine 16, 39 (2024).
159. J. W. Daulton, R. J. Molnar, J. A. Brinkerhoff, T. Weir, M. A. Hollis, and A. Zaslavsky, “Limiting role of dislocations in high-current AlGaN/GaN hot electron transistors”, Appl. Phys. Lett. 124, 063505 (2024).

2023
158. J. W. Daulton, R. J. Molnar, J. A. Brinkerhoff, Z. C. Adamson, M. A. Hollis, and A. Zaslavsky, “GaN hot electron transistors: From ballistic to coherent”, Solid State Electronics 208, 108741 (2023).

2022
157. J. W. Daulton, R. J. Molnar, J. Brinkerhoff, M. A. Hollis, and A. Zaslavsky, “III-nitride vertical hot electron transistor with polarization doping and collimated injection”, Appl. Phys. Lett. 121, 223503 (2022).
156. E. Garcia, C. Bales, W. Patterson, A. Zaslavsky, and V. F. Mitrovic, “Cryogenic probe for low-noise, high-frequency electronic measurements”, Rev. Sci. Instrum. 93, 103902 (2022).
155. S. Cho, A. Zaslavsky, C. A. Richter, J. Majikes, J. Liddle, F. Andrieu, S. Barraud, and A. Balijepalli, “High-resolution DNA binding kinetics measurements with double gate FD-SOI transistors”, Tech. Dig. IEDM pp. 583-586 (2022).
154. S. T. Le, S. Cho, A. Zaslavsky, C. A. Richter, and A. Balijepalli, “High-performance dual-gate graphene pH sensors”, Appl. Phys. Lett. 120, 263701 (2022).

2021
153. S. Cristoloveanu, J. Lacord, S. Martinie, C. Navarro, F. Gamiz, Jing Wan, H. El Dirani, K.-H. Lee, and A. Zaslavsky, “A review of sharp-switching band-modulation devices”, Micromachines 12, 01540 (2021) [invited paper].
152. S. Shi, D. Pacifici, and A. Zaslavsky, “Fast and efficient germanium quantum dot photodetector with an ultrathin active layer”, Appl. Phys. Lett. 119, 221108 (2021).
151. A. Zaslavsky, C. A. Richter, P. Shrestha, B. D. Hoskins, S. T. Le, A. Madhavan, and J. J. McClelland, “Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications”, Appl. Phys. Lett. 119, 043501 (2021).
150. J. Liu, K. Xiao, A. Zaslavsky, S. Cristoloveanu, and J. Wan, “Optimization of photoelectron in-situ sensing device in FD-SOI”, J. Electron Dev. Soc. 9, 187 (2021).

2020
149. S. Shi, A. Zaslavsky, and D. Pacifici, “High-performance germanium quantum dot photodetectors: Response to continuous wave and pulsed excitation”, Appl. Phys. Lett. 117, 251105 (2020).
148. X. Y. Chen, J. Liu, K. Xiao, A. Zaslavsky, S. Cristoloveanu, F. Y. Liu, B. Li, and J. Wan, “Unijunction transistor on SOI substrate”, Proc. 2020 Intern. Conf. Solid-State Integr. Circ. Technol. (ICSICT), pp. 1-3 (2020).
147. M. Arsalan, J. Liu, A. Zaslavsky, S. Cristoloveanu, F. Y. Liu, B. H. Li, B. Li, and J. Wan, “Suppressing crosstalk in the photoelectron in-situ sensing device (PISD) by double SOI”, Proc. EuroSOI-ULIS Conf. pp. 1-4 (2020).
146. E. Rezaei, M. Donato, W. R. Patterson, R. I. Bahar, and A. Zaslavsky, “Fundamental thermal limits on data retention in low-voltage CMOS latches and SRAM”, IEEE Trans. Dev. Mater. Reliability 20, 488 (2020).
145. M. Arsalan, J. Liu, A. Zaslavsky, S. Cristoloveanu, and J. Wan, “Deep-depletion effect in SOI substrates and its application in photodetectors with tunable responsivity and detection range”, IEEE Trans. Electron Dev. 67,
3256 (2020).
144. A. Ge, G. Kastlunger, J. Meng, P. Lindgren, J. Song, Q. Liu, A. Zaslavsky, T. Lian, and A. Peterson, “On the coupling of electron transfer to proton transfer at electrified interfaces”, J. Amer. Chem. Soc. 142, 11829 (2020).
143. K. Xiao, J. Liu, J. N. Deng, Y. L. Jiang, W. Z. Bao, A. Zaslavsky, S. Cristoloveanu, X. Gong, and J. Wan, “Novel semiconductor devices based on SOI substrate”, Proc. China Semicond. Technol. Intern. Conf. (CSTIC), pp. 1-2 (2020).
142. J. Liu, K.-M. Zhu, A. Zaslavsky, S. Cristoloveanu, and J. Wan, “Photodiode with low dark current built in silicon-on-insulator using electrostatic doping”, Solid State Electronics 168, 107733 (2020).

2019
141. W. Li, M. S. R. Huang, S. K. Yadavalli, D. Lizarazo-Ferro, Y. Zhou, A. Zaslavsky, N. P. Padture, and R. Zia, “Direct characterization of carrier diffusion in halide-perovskite thin films using transient photoluminescence imaging”, ACS Photonics 6, 2375 (2019).
140. J. Liu, M. Arsalan, A. Zaslavsky, S. Cristoloveanu, and J. Wan, “Optimization of photoelectron in-situ sensing device in FD-SOI”, Proc. IEEE SOI-3D-Subthreshold (S3S) Conf. pp. 1-2 (2019).
139. E. Rezaei, M. Donato, W. R. Patterson, A. Zaslavsky, and R. I. Bahar, “Thermal-noise-induced error simulation framework for subthreshold CMOS SRAM”, Proc. IEEE SOI-3D-Subthreshold (S3S) Conf. pp. 1-3 (2019).
138. J. Liu, X. Y. Cao, A. Zaslavsky, S. Cristoloveanu, and J. Wan, “Photodiode with low dark current built in silicon-on-insulator by electrostatic doping”, Proc. EuroSOI-ULIS Conf., pp. 1-4 (2019).
137. J. Liu, X. Y. Cao, B. R. Lu, Y. F. Chen, A. Zaslavsky, S. Cristoloveanu, and J. Wan, “Dynamic coupling effect in Z²-FET and its application for photodetection”, J. Electron Dev. Soc. 7, 846 (2019).
136. J. Liu, X. Y. Cao, B. R. Lu, Y. F. Chen, A. Zaslavsky, S. Cristoloveanu, M. Bawedin, and J. Wan, “Z2-FET: A multifunctional device used for photodetection”, Proc. China Semicond. Technol. Intern. Conf. (CSTIC), art. 8755788 (2019).
135. S. Siontas, Dongfang Li, Haobei Wang, Aravind A.V.P.S, A. Zaslavsky, and D. Pacifici, “High-performance germanium quantum dot photodetectors in the visible and near infrared”, Mater. Sci. Semicond. Processing 92, 19 (2019).

2018
134. J. Wan, W. Z. Bao, J. N. Deng, Z. X. Guo, X. Y. Cao, B. R. Lu, Y. F. Chen, A. Zaslavsky, S. Cristoloveanu, and M. Bawedin, “ICPD: an SOI-based photodetector with high responsivity and tunable response spectrum”, Proc. 14th Intern. Conf. Solid-State Integr. Circ. Technol. (ICSICT), art. 8565035 (2018) [invited].
133.   S. Siontas, Haobei Wang, Dongfang Li, A. Zaslavsky, and D. Pacifici, “Broadband visible-to-telecom wavelength germanium quantum dot photodetectors”, Appl. Phys. Lett. 113, 181101 (2018).
132. J. Liu, X. Y. Cao, B. R. Lu, Y. F. Chen, A. Zaslavsky, S. Cristoloveanu, M. Bawedin, and J. Wan, “A new photodetector on SOI”, Proc. IEEE SOI-3D-Subthreshold (S3S) Conf., pp. 1–2 (2018).
131. M. Arsalan, X. Y. Cao, B. R. Lu, Y. F. Chen, A. Zaslavsky, S. Cristoloveanu, M. Bawedin, and J. Wan, “A highly sensitive photodetector based on deep-depletion effects in SOI transistors”, Proc. IEEE SOI-3D-Subthreshold (S3S) Conf., pp. 1–3 (2018).
130. J. Wan, J. N. Deng, X. Y. Cao, H. B. Liu, B. R. Lu, Y. F. Chen, A. Zaslavsky, S. Cristoloveanu, and M. Bawedin, “Novel photodetector based on FD-SOI substrate with interface coupling effect”, Proc. 18th Intern. Workshop Junction Technol. (IWJT), pp. 1–4 (2018).
129. M. Donato, R. I. Bahar, W. Patterson, and A. Zaslavsky, “A subthreshold transient simulator based on integrated random telegraph and thermal noise modeling”, IEEE Trans. Computer-Aided Design 37, 643 (2018).
128. S. Siontas, D. Li, P. Liu, S. Aujla, A. Zaslavsky, and D. Pacifici, “Low-temperature operation of high-efficiency germanium quantum dot photodetectors in the visible and near infrared”, phys. status solidi A 215, 1700453 (2017).
127. J. N. Deng, J. H. Shao, B. R. Lu, Y. F. Chen, A. Zaslavsky, S. Cristoloveanu, M. Bawedin, and J. Wan, “Interface coupled photodetector (ICPD) with high photoresponsivity based on silicon-on-insulator substrate (SOI)”, J. Electron Dev. Soc. 6, 557 (2018).

2017
126. Yang Song, A. Katsman, A. L. Butcher, D. C. Paine, and A. Zaslavsky, “Temporal and voltage stress stability of high performance IZO thin film transistors”, Solid State Electronics 136, 43 (2017).
125. J. N. Deng, J. H. Shao, B. R. Lu, Y. F. Chen, A. Zaslavsky, S. Cristoloveanu, M. Bawedin, and J. Wan, “A novel photodetector based on the interface coupling effect in SOI MOSFETs”, Proc. IEEE SOI-3D-Subthreshold (S3S) Conf., pp. 1–3 (2017).
124. S. Lee, Yang Song, H. Park, A. Zaslavsky, and D. C. Paine, “Channel scaling and field-effect mobility extraction in amorphous InZnO thin film transistors”, Solid State Electronics 135, 94 (2017).
123. G. A. Umana-Membreno, Yang Song, N. D. Akhavan, J. Antoszewski, D. C. Paine, A. Zaslavsky, and L. Faraone, “Al₂O₃/HfO₂ gate oxide annealing effects on the electronic transport parameters of indium zinc oxide for thin-film transistor applications”, Microelectronic Eng. 178, 164 (2017).

2016
122. S. Luryi, J. Xu, and A. Zaslavsky, eds., Future Trends in Microelectronics: Journey into the Unknown, Wiley/IEEE Press (2016) [ISBN: 978-1-119-06911-9].
121. S. Cristoloveanu, J. Wan, and A. Zaslavsky, “A review of sharp-switching devices for ultra-low-power applications”, J. Electron Dev. Soc. 4, 215 (2016).
120.   Yang Song, A. Zaslavsky, and D. C. Paine, “High performance top-gated indium-zinc-oxide thin film transistors with in-situ formed HfO₂ gate insulator”, Thin Solid Films 614, 52 (2016).
119.   S. Siontas, Pei Liu, A. Zaslavsky, and D. Pacifici, “Noise performance of high-efficiency germanium quantum dot photodetectors”, Appl. Phys. Lett. 109, 053508 (2016).
118. M. Donato, R. I. Bahar, W. R. Patterson, and A. Zaslavsky, “A fast simulator for the analysis of sub-threshold thermal noise transients”, Design Automation Conf. (DAC), art. a56 (2016).a href=”https://sites.brown.edu/alex-zaslavsky-research-lab/files/2024/03/2016DAC-Donato-ea3efe2248a09893.pdf”>
117. Xijing Han, M. Donato, R. I Bahar, W. R. Patterson, and A. Zaslavsky, “Design of error-resilient logic gates with reinforcement using implications”, Proc. Great Lakes Symp. VLSI (GLSVLSI), pp. 191–196 (2016).
116. Pei Liu, P. Longo, A. Zaslavsky, and D. Pacifici, “Optical bandgap of single- and multi-layered amorphous germanium thin films”, J. Appl. Phys. 119, 014304 (2016).

2015
115. Peng Zhang, J. Wan, A. Zaslavsky, and S. Cristoloveanu, “CMOS-compatible FDSOI bipolar-enhanced tunneling FET”, Proc. SOI-3D-Subthreshold (S3S) Conf., art. 7333513 (2015).
114. M. Donato, R. I Bahar, W. R. Patterson, and A. Zaslavsky, “A simulation framework for analyzing transient effects due to thermal noise in sub-threshold circuits”, Proc. Great Lakes Symp. VLSI (GLSVLSI), pp. 45–50 (2015).
113. Peng Zhang, Pei Liu, A. Zaslavsky, D. Pacifici, Jong-Yoon Ha, S. Krylyuk, and A. V. Davydov, “Dense nanoimprinted silicon nanowire arrays with passivated axial pin junctions for photovoltaic applications”, J. Appl. Phys. 117, 125104 (2015).
112. J. Wan, A. Zaslavsky, and S. Cristoloveanu, “Comment on ‘Investigation of tunnel field-effect transistors as a capacitor-less memory cell’ [Appl. Phys. Lett. 104, 092108 (20140)]”, Appl. Phys. Lett. 106, 016101 (2015).
111. S. Cristoloveanu, M. Bawedin, C. Navarro, S.-J. Chang, J. Wan, F. Andrieu, C. Le Royer, N. Rodriguez, F. Gamiz, A. Zaslavsky, and Y. T. Kim, “Special memory mechanisms in SOI devices”, ECS Trans. 66, 201 (2015).

2014
110. Rui Xu, Jian He, Yang Song, Wei Li, A. Zaslavsky, and D. C. Paine, “Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors”, Appl. Phys. Lett. 105, 093504 (2014).
109. Peng Zhang, Son T. Le, Xiaoxiao Hou, A. Zaslavsky, D. E. Perea, S. A. Dayeh, and S. T. Picraux, “Strong room-temperature negative transconductance in an axial Si/Ge hetero-nanowire tunneling field-effect transistor”, Appl. Phys. Lett. 105, 062106 (2014).
108. S. Cristoloveanu, J. Wan, P. Ferrari, M. Bawedin, C. Navarro, A. Zaslavsky, C. Le Royer, A. Villalon, C. Fenouillet-Beranger, Y. Solaro, and P. Fonteneau, “Beyond TFET: Alternative mechanisms for CMOS-compatible sharp-switching devices”, Proc. SOI-3D-Subthreshold (S3S) Conf., art. 7028228 (2014).
107. Yang Song, Rui Xu, Jian He, Stylianos Siontas, A. Zaslavsky, and D. C. Paine, “Top-gated indium-zinc-oxide thin-film transistors with in-situ Al2O3/HfO2 gate oxide”, Electron Dev. Lett. 35, 1251 (2014).
106. A. Revelant, A. Villalon, Y. Wu, A. Zaslavsky, C. Le Royer, H. Iwai, and S. Cristoloveanu, “Electron-hole bilayer TFET: Experiments and comments”, IEEE Trans. Electron Dev. 61, 2674 (2014).
105. Y. Solaro, J. Wan, P. Fonteneau, C. Fenouillet-Beranger, C. Le Royer, A. Zaslavsky, P. Ferrari, and S. Cristoloveanu, “Z²-FET: A promising FDSOI device for ESD protection”, Solid State Electronics 97, 23 (2014).

2013
104. S. Cosentino, S. Mirabella, Pei Liu, Son T. Le, M. Miritello, S. Lee, I. Crupi, G. Nicotra, C. Spinella, D. C. Paine, A.Terrasi, A. Zaslavsky, and D. Pacifici, “Role of Ge nanoclusters in the performance of Ge-based photodetectors”, Thin Solid Flims 548, 551 (2013).
103. S. Cristoloveanu, J. Wan, C. Le Royer, and A. Zaslavsky, “Innovative sharp-switching devices”, ECS Trans. 54, 65 (2013).
102. A. Zaslavsky, J. Wan, S. T. Le, P. Jannaty, S. Cristoloveanu, C. Le Royer, D. E. Perea, S. A. Dayeh, and S. T. Picraux, “Sharp-switching high-current tunneling devices”, ECS Trans. 53, 63 (2013).
101. S. Cristoloveanu, J. Wan, C. Le Royer, and A. Zaslavsky, “Sharp-switching SOI devices”, ECS Trans. 53, 3 (2013).
100. J. Wan, S. Cristoloveanu, C. Le Royer, and A. Zaslavsky, “A systematic study of the sharp-switching Z²-FET device: From mechanism to modeling and applications”, Solid State Electronics 90, 2 (2013).
99.  J. Wan, A. Zaslavsky, C. Le Royer, and S. Cristoloveanu, “Novel bipolar-enhanced tunneling FET (BET-FET) with simulated high I_ON“, IEEE Electron Dev. Lett. 34, 24 (2013).
98. S. Luryi, J. Xu, and A. Zaslavsky, eds., Future Trends in Microelectronics: Frontiers and Innovations, Wiley/IEEE Press (2013) [ISBN: 978-1-118-44216-6].
97.  J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Progress in Z²-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage”, Solid State Electronics 84, 147 (2013).

2012
96. J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Z2-FET used as a 1-transistor high-speed DRAM”, Proc. European Solid State Dev. Res. Conf. (ESSDERC), pp. 197-200 (2012).
95. P. Liu, S. T. Le, S. Lee, D. Paine, A. Zaslavsky, D. Pacifici, S. Cosentino, S. Mirabella, M. Miritello, I. Crupi, and A. Terrasi, “Fast, high-efficiency Ge quantum dot photodetectors”, Proc. Lester Eastman Conf. (LEC) High Performance Dev., art. 6410978 (2012).
94. S. Cristoloveanu, M. Bawedin, J. Wan, S.-J. Chang, C. Navarro, A. Zaslavsky, C. Le Royer, F. Andrieu, N. Rodriguez, and F. Gamiz, “Innovative capacitorless SOI DRAMs”, Proc. IEEE Intern. SOI Conf., art. 6404391 (2012).
93.  Son T. Le, D. E. Perea, P. Jannaty, X. Luo, S. Dayeh, A. Zaslavsky, and S. T. Picraux, “Axial SiGe heteronanowire tunneling field-effect transistors”, Nano Lett. 12, 5850 (2012).
92.  Pei Liu, S. Cosentino, Son T. Le, S. Lee, D. Paine, A. Zaslavsky, S. Mirabella, M. Miritello, I. Crupi, A. Terrasi, and D. Pacifici, “Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors”, J. Appl. Phys. 112, 083103 (2012).
91. J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Z2-FET: A zero-slope switching device with gate-controlled hysteresis”, Proc. Intern. Symp. VLSI Technol. Syst. Applications (VLSI-TSA), art. 6210113 (2012).
90. M. Donato, F. Cremona, W. Jin, I. Bahar, W. Patterson, A. Zaslavsky, and J. Mundy, “A noise-immune sub-threshold circuit design based on selective use of Schmitt-trigger logic”, Proc. 22nd Great Lakes Symp. VLSI (GLSVLSI), pp. 39–44 (2012).
89.  P. Jannaty, F. C. Sabou, Son T. Le, M. Donato, R. I. Bahar, W. Patterson, J. Mundy, and A. Zaslavsky, “Shot-noise-induced failure in nanoscale flip-flops: II. Failure rates in 10 nm ultimate CMOS”, IEEE Trans. Electron Dev. 59, 807 (2012).
88.  P. Jannaty, F. C. Sabou, Son T. Le, M. Donato, R. I. Bahar, W. Patterson, J. Mundy, and A. Zaslavsky, ” Shot-noise-induced failure in nanoscale flip-flops: I. Numerical framework”, IEEE Trans. Electron Dev. 59, 800 (2012).
87.  J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “A compact capacitor-less high-speed DRAM using field effect-controlled charge regeneration”, IEEE Electron Dev. Lett. 33, 179 (2012).
86.  J. Wan, S. Cristoloveanu, C. Le Royer, and A. Zaslavsky, “A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection”, Solid State Electronics 76, 109 (2012).

2011
85.  J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “A tunneling field effect transistor model combining interband tunneling with channel transport”, J. Appl. Phys. 110, 104503 (2011).
84.  S. Cosentino, Pei Liu, Son T. Le, S. Lee, D. Paine, A. Zaslavsky, D. Pacifici, S. Mirabella, M. Miritello, I. Crupi and A. Terrasi, “High-efficiency silicon-compatible photodetectors based on Ge quantum dots”, Appl. Phys. Lett. 98, 221107 (2011).
83.  J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling”, Solid State Electronics 65-66, 226 (2011).
82.  J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Gate-induced drain leakage in FD-SOI devices: What the TFET teaches us about the MOSFET”, Microelectronic Eng. 88, 1301 (2011).
81.  P. Jannaty, F. C. Sabou, R. I. Bahar, J. Mundy, W. R. Patterson, and A. Zaslavsky, “Full two-dimensional Markov chain analysis of thermal soft errors in subthreshold nanoscale CMOS”, IEEE Trans. Dev. Mater. Reliability 11, 50 (2011).

2010
80. J. Wan, C. Le Royer, S. Cristoloveanu, and A. Zaslavsky, “SOI TFETs: Suppression of ambipolar leakage and low-frequency noise behavior”, Proc. European Solid State Dev. Res. Conf. (ESSDERC), pp. 341-44 (2010).
79. S. Luryi, J. Xu, and A. Zaslavsky, eds., Future Trends in Microelectronics: From Nanophotonics to Sensors and Energy, Wiley Interscience (2010).
78. P. Jannaty, F. C. Sabou, R. I. Bahar, J. Mundy, W. R. Patterson, and A. Zaslavsky, “Numerical queue solution of thermal noise-induced soft errors in subthreshold CMOS devices”, Proc. 20th ACM Great Lakes Symp. VLSI (GLSVLSI), pp. 281-85 (2010).
77.  J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Low frequency noise behavior of tunneling field effect transistors”, Appl. Phys. Lett. 97, 243503 (2010).
76.  Son T. Le, P. Jannaty, A. Zaslavsky, S. A. Dayeh, and S. T. Picraux, “Growth, electrical rectification, and gate control in axial in-situ doped p-n junction Ge nanowires”, Appl. Phys. Lett. 96, 262102 (2010).
75.  P. Jannaty, F. C. Sabou, M. Gadlage, R. I. Bahar, J. Mundy, W. R. Patterson, R. A. Reed, R. A. Weller, R. D. Schrimpf, and A. Zaslavsky, “Two-dimensional Markov chain analysis of radiation-induced soft errors in subthreshold nanoscale CMOS devices”, IEEE Trans. Nucl. Sci. 57, 3678 (2010).

2009
74.  F. C. Sabou, D. Kazazis, R. I. Bahar, J. Mundy, W. R. Patterson, and A. Zaslavsky, “Markov chain analysis of thermally induced soft errors in suthreshold nanoscale CMOS circuites”, IEEE Trans. Dev. Mater. Reliability 9, 494 (2009).
73.  D. Kazazis, S. Guha, N. A. Bojarczuk, A. Zaslavsky, and H.-C. Kim, “Substrate Fermi level effects in photocatalysis on oxides: Properties of ultrathin TiO₂/Si films”, Appl. Phys. Lett. 95, 064103 (2009).
72.  D. Kazazis, P. Jannaty, A. Zaslavsky, C. Le Royer, C. Tabone, L. Clavelier, and S. Cristoloveanu, “Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator”, Appl. Phys. Lett. 94, 263508 (2009).

2008
71.   V. J. Goldman, Jun Liu, and A. Zaslavsky, “Electron tunneling spectroscopy of a quantum antidot in the integer quantum Hall regime”, Phys. Rev. B 77, 115328 (2008).

2007
70.   A. Zaslavsky, S. Soliveres, C. Le Royer, S. Cristoloveanu, L. Clavelier, and S. Deleonibus, “Negative transconductance in double-gate germanium-on-insulator field effect transistors”, Appl. Phys. Lett. 91, 183511 (2007).
69. K. Nepal, R. I. Bahar, J. Mundy, W. R. Patterson, and A. Zaslavsky, “Techniques for designing noise-tolerant multi-level combinational circuits”, Proc. Design Automation Test Europe (DATE), pp. 576-581 (2007).
68.  D. P. Wang, D. E. Feldman, B. R. Perkins, A. J. Yin, G. H. Wang, J. M. Xu, and A. Zaslavsky, “Hopping conduction in individual disordered multiwalled carbon nanotubes”, Solid State Commun. 142, 287 (2007).
67. S. Luryi, J. Xu, and A. Zaslavsky, eds., Future Trends in Microelectronics: Up the Nano Creek, Wiley Interscience, New York (2007).
66.  S. Luryi and A. Zaslavsky, “Nonclassical devices in SOI: Genuine or copyright from III-V”, Solid State Electronics 51, 212 (2007).
65. H. Li, J. Mundy, W. R. Patterson, D. Kazazis, A. Zaslavsky, and R. I. Bahar, “Thermally-induced soft errors in nanoscale CMOS circuits”, Proc. Nanoarch. Conf. pp. 62-69 (2007).
64.  K. Nepal, R. I. Bahar, J. Mundy, W. R. Patterson, A. Zaslavsky, “Designing nanoscale logic circuits based on Markov random fields”, J. Electronic Testing: Theory Applications 23, 255 (2007).
63.  D. Kazazis, A. Zaslavsky, E. Tutuc, N. Bojarczuk, and S. Guha, “Negative differential resistance in ultrathin Ge-on-insulator FETs”, Semicond. Sci. Technol. 22, S1 (2007).

2006
62.  K. Nepal, R. I. Bahar, J. Mundy, W. R. Patterson, and A. Zaslavsky, “The MRF reinforcer: A probabilistic element for space redundancy in nanoscale circuits”, IEEE Micro 26, 19 (2006).
61.  S. Luryi and A. Zaslavsky, “Quantum well silicon-on-insulator devices: tunneling transistor and intersubband laser”, Intern. J. High Speed Electronics Syst. 16, 411 (2006).
60. D. P. Wang, F. Y. Biga, A. Zaslavsky, and G. P. Crawford, “Robust stretchable interconnects for flexible display applications”, Dig. Tech. Papers Soc. Info. Display (SID) Intern. Symp. 37, 466 (2006).
59. D. Kazazis, A. Zaslavsky, E. Tutuc, N. A. Bojarczuk, and S. Guha, “Negative differential resistance in ultra-thin Ge-on-insulator FETs”, Tech. Dig. Third Intern. SiGe Technol. Device Meeting (ISTDM), article 1715947 (2006).
58.   G. H. Wang, D. T. Tambe, A. Zaslavsky, and V. B. Shenoy, “Resonant magnetotunneling spectroscopy of strained elliptical Si/SiGe quantum dots”, Phys. Rev. B 73, 115319 (2006).
57.  K. Nepal, R. I. Bahar, J. Mundy, W. R. Patterson, and A. Zaslavsky, “Designing MRF based error correcting circuits for memory elements”, Proc. Design Autom. Test Europe Conf. (DATE), pp. 792-793 (2006).
56.  K. Nepal, R. I. Bahar, J. Mundy, W. R. Patterson, and A. Zaslavsky, “Optimizing noise-immune nanoscale circuits using principles of Markov random fields”, Proc. 16th ACM Great Lakes Symp. VLSI (GLSVLSI), pp. 149-152 (2006).

2005
55.  V. J. Goldman, J. Liu, and A. Zaslavsky, “Fractional statistics of Laughlin quasiparticles in quantum antidots”, Phys. Rev. B 71, 153303 (2005).
54.  D. P. Wang, Frederick Y. Biga, A. Zaslavsky, and Gregory P. Crawford, “Electrical resistance of island-containing thin metal interconnects on polymer substrates under high strain”, J. Appl. Phys. 98, 086107 (2005).
53.  D. P. Wang, B. R. Perkins, A. J. Yin, A. Zaslavsky, J. M. Xu, R. Beresford, and G. L. Snider, “Carbon nanotube gated lateral resonant tunneling field-effect transistor”, Appl. Phys. Lett. 87, 152102 (2005).
52.  B. R. Perkins, D. P. Wang, D. Soltman, A. J. Yin, J. M. Xu, and A. Zaslavsky, “Differential current amplification in three-terminal Y-junction carbon nanotube devices”, Appl. Phys. Lett. 87, 123504 (2005).
51.  E. J. Preisler, S. Guha, B. R. Perkins, D. Kazazis, and A. Zaslavsky, “Ultrathin all-epitaxial germanium-on-insulator devices”, Appl. Phys. Lett.  86, 223504 (2005).
50. K. Nepal, R. Iris Bahar, J. Mundy, W. R. Patterson, and A. Zaslavsky, “Designing logic circuits for probabilistic computation in the presence of noise”, Design Automation Conference (DAC), paper 29.4, pp. 485-490 (2005).
49.  A. Ohata, J. Pretet, S. Cristoloveanu, and A. Zaslavsky, “Correct biasing rules for virtual double-gate mode operation in SOI-MOSFETs”, IEEE Trans. Electron Dev. 52, 124 (2005).

2004
48. S. Luryi, J. Xu, and A. Zaslavsky, eds., Future Trends in Microelectronics: The Nano, the  Giga, and the Ultra, Wiley Interscience/IEEE Press (2004).
47.  C. Aydin, A. Zaslavsky, S. Luryi, S. Cristoloveanu, D. Mariolle, D. Fraboulet, and S. Deleonibus, “Lateral interband tunneling transistor in silicon-on-insulator”, Appl. Phys. Lett. 84, 1780 (2004).
46.  S. Luryi and A. Zaslavsky, “Blue sky for SOI: New opportunities for quantum and hot-electron devices”, Solid State Electronics 48, 877 (2004) [invited paper]

2003
45.   A. Zaslavsky, C. Aydin, S. Luryi, S. Cristoloveanu, D. Mariolle, D. Fraboulet, S. Deleonibus, “Ultrathin silicon-on-insulator vertical tunneling transistor”, Appl. Phys. Lett. 83, 1653 (2003).

2002
44.   Jun Liu, A. Zaslavsky, B. R. Perkins, C. Aydin, and L. B. Freund, “Single-hole tunneling into a strain-induced SiGe quantum ring”, Phys. Rev. B (Rapid Comm.) 66, 161304 (2002).
43.   C. Aydin, A. Zaslavsky, G. J. Sonek, and J. Goldstein, “Reduction of reflection losses in ZnGeP₂ using motheye anti-reflection surface relief structures”, Appl. Phys. Lett. 80, 2242 (2002).
42.   Jun Liu, A. Zaslavsky, and L. B. Freund, “Strain-induced quantum ring hole states in a gated vertical quantum dot”, Phys. Rev. Lett. 89, 096804 (2002).
41. S. Luryi, J. Xu, and A. Zaslavsky, eds., Future Trends in Microelectronics: The Nano Millennium, Wiley Interscience and IEEE Press (2002).

2001
40.   I. Karakurt, V. J. Goldman, Jun Liu, and A. Zaslavsky, “Evidence for absence of compressed edge channel rings in quantum antidots”, Phys. Rev. Lett. 87, 146801 (2001).
39.   V. J. Goldman, I. Karakurt, Jun Liu, and A. Zaslavsky, “Invariance of charge of Laughlin quasiparticles”,  Phys. Rev. B 64, 085319 (2001).
38.   F. Allibert, T. Ernst, J. Pretet, N. Hefyene, C. Perret, A. Zaslavsky, and S. Cristoloveanu, “From SOI materials to innovative devices”,  Solid State Electronics 45, 501 (2001).
37.   A. N. Kholod, M. Liniger, A. Zaslavsky, and F. Arnaud d’Avitaya, “A new cascaded resonant tunneling diode quantizer for analog-to-digital flash conversion”, Appl. Phys. Lett. 79, 129 (2001).
36. S. Cristoloveanu, F. Allibert, and A. Zaslavsky, “Double-Gate MOSFETs: Performance and technology options”, Proc. Intern. Semicond. Dev. Res. Conf. (ISDRS), pp. 459-460 (2001).
35. F. Allibert, A. Zaslavsky, J. Pretet and S. Cristoloveanu, “Double-gate MOSFETs: Is gate alignment mandatory?”, Proc. European Solid State Dev. Res. Conf. (ESSDERC) pp. 267-270 (2001).
34. F. Allibert, A. Zaslavsky, and S. Cristoloveanu, “Double-Gate SOI MOSFETs with asymmetrical configuration”, em>Proc. 2001 IEEE Intern. SOI Conf. pp. 149-150 (2001).

2000
33.   Jun Liu, A. Zaslavsky, D. Akyüz, B. R. Perkins, and L. B. Freund, “Magnetotunneling spectroscopic probe of quantization due to inhomogeneous strain in a Si/SiGe vertical quantum dot”, Phys. Rev. B (Rapid Comm.) 62, R7731 (2000).
32. Y.-S. Park, M. S. Shur, S. Luryi, J. Xu, and A. Zaslavsky, eds., Frontiers in Electronics: From Materials to Systems, World Scientific (2000).

1999
31.   A. N. Kholod, V. E. Borisenko, A. Zaslavsky, and F. Arnaud d’Avitaya, “Current oscillations in semiconductor-insulator multiquantum wells”, Phys. Rev. B 60, 15975 (1999).
30.   C. D. Akyüz, A. Zaslavsky, H. T. Johnson, L. B. Freund, and D. A. Syphers, “Strain spectroscopy of triple-barrier tunneling nanostructures”, Phys. Rev. B 60, 16597 (1999).
29. S. Luryi, J. Xu, and A. Zaslavsky, eds., Future Trends in Microelectronics: Off the Beaten Path, Wiley Interscience, New York (1999).

1998
28.   H. T. Johnson, L. B. Freund, C. D. Akyüz, and A. Zaslavsky, “Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires”, J. Appl. Phys. 84, 3714 (1998).
27.   P. Gassot, U. Gennser, D. M. Symons, A. Zaslavsky, D. A. Grützmacher, and J. C. Portal, “Stress and pressure effects on a Si/SiGe double-barrier structure studied by magneto-tunneling spectroscopy”, Physica E 2, 758 (1998).
26.   C. D. Akyüz, A. Zaslavsky, L. B. Freund, D. A. Syphers, and T. O. Sedgwick, “Inhomogeneous strain in individual quantum dots probed by transport measurements”, Appl. Phys. Lett. 72, 1739 (1998).

1997
25.   A. Zaslavsky, S. Luryi, C. A. King, and R. W. Johnson, “Multiemitter Si/GeSi heterojunction bipolar transistor with no base contact and enhanced logic functionality”, IEEE Electron Dev. Lett. 18, 453 (1997).

1996
24. S. Luryi, J. Xu, and A. Zaslavsky, eds., Future Trends in Microelectronics: Reflections on the Road to Nanotechnology, Springer Dordrecht, Kluwer Academic Publishers (1996).
23.   U. Gennser, A. Zaslavsky, D. A. Grützmacher, P. Gassot, and J. C. Portal, “Uniaxial stress effects on a Si/SiGe double-barrier resonant tunneling structure studied by magnetotunneling spectroscopy”, Appl. Surf. Sci. 102, 242 (1996).
22.   S. Y. Lin, V. M. Hietala, S. K. Lyo, and A. Zaslavsky, “Photonic bandgap quantum well and quantum box structures: a high-Q resonant cavity”, Appl. Phys. Lett. 68, 3233 (1996).
21.   B. Ferland, C. D. Akyüz, A. Zaslavsky, and T. O. Sedgwick, “Resonant tunneling spectroscopy of coupled hole subbands in strained Si/SiGe triple barrier structures”, Phys. Rev. B 53, 994 (1996).

1995
20.   A. Zaslavsky, K. R. Milkove, Y. H. Lee, B. Ferland, and T. O. Sedgwick, “Strain relaxation in silicon-germanium microstructures observed by resonant tunneling spectroscopy”, Appl. Phys. Lett. 67, 3921 (1995).
19.   D. A. Grützmacher, T. O. Sedgwick, L. Scandella, A. Zaslavsky, A. R. Powell, and S. S. Iyer, “SiGe/Si quantum wells with abrupt interfaces grown by atmospheric pressure chemical vapor deposition”, Vacuum 46, 947 (1995).
18.   Ç. Kurdak, A. Zaslavsky, D. C. Tsui, M. Santos, and M. Shayegan, “High-field transport in an edge overgrown lateral superlattice”, Appl. Phys. Lett. 66, 323 (1995).

1994
17.   A. Zaslavsky, D. A. Grützmacher, S. Y. Lin, T. P. Smith III, and T. O. Sedgwick, “Valence band Landau level mixing and anisotropy in SiGe investigated by resonant magnetotunneling”, Surf. Sci. 305, 307 (1994).
16.   A. Zaslavsky, K. R. Milkove, Y. H. Lee, K. K. Chan, F. Stern, D. A. Grützmacher, S. A. Rishton, C. Stanis, and T. O. Sedgwick, “Fabrication of three-terminal resonant tunneling devices in silicon-based material”, Appl. Phys. Lett. 64, 1699 (1994).

1993
15.   H. Munekata, A. Zaslavsky, P. Fumagalli, and R. J. Gambino, “Preparation of (In,Mn)As/ (Ga,Al)Sb magnetic semiconductor heterostructures and their ferromagnetic charac-teristics”, Appl. Phys. Lett. 63, 2929 (1993).
14.   A. Zaslavsky, T.P. Smith III, D. A. Grützmacher, S. Y. Lin, T. O. Sedgwick, and D. A. Syphers, “In-plane valence-band nonparabolicity and anisotropy in strained Si-Ge quantum wells”, Phys. Rev. B 48, 15112 (1993).
13.   A. Kumar, S. E. Laux, Frank Stern, A. Zaslavsky, J. M. Hong, and T. P. Smith III, “Effect of nonequilibrium deep donors in heterostructure modeling”, Phys. Rev. B (Brief Reports) 48, 4899 (1993).
12.   T. O. Sedgwick, D. A. Grützmacher, A. Zaslavsky, and V. P. Kesan, “Selective SiGe and heavily As doped Si deposited at low temperature by atmospheric pressure chemical vapor deposition”, J. Vac. Sci. Technol. B 11, 1124 (1993).
11.   D. A. Grützmacher, T. O. Sedgwick, G. A. Northrop, A. Zaslavsky, A. R. Powell, and V. P. Kesan, “Very narrow SiGe/Si quantum wells deposited by low-temperature atmospheric pressure chemical vapor deposition”, J. Vac. Sci. Technol. B 11, 1083 (1993).
10.   A. Zaslavsky, D. A. Grützmacher, S. Y. Lin, T. P. Smith III, R. A. Kiehl, and T. O. Sedgwick, “Observation of valence-band Landau-level mixing by resonant magnetotunneling”, Phys. Rev. B (Rapid Comm.) 47, 16036 (1993).
9.     D. A. Grützmacher, T. O. Sedgwick, A. Zaslavsky, A. R. Powell, R. A. Kiehl, W. Ziegler, and J. Cotte, “Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition”, J. Electron. Mater. 22, 303 (1993).

1992
8.     A. Zaslavsky, D. A. Grützmacher, Y. H. Lee, W. Ziegler, and T. O. Sedgwick, “Selective growth of Si/SiGe resonant tunneling diodes by atmospheric pressure chemical vapor deposition”, Appl. Phys. Lett. 61, 2872 (1992).
7.     S. Y. Lin, A. Zaslavsky, K. Hirakawa, D.C. Tsui, and J. F. Klem, “Subband dispersion of holes in AlAs/InGaAs/ AlAs strained-layer quantum wells measured by resonant magnetotunneling”, Appl. Phys. Lett. 61, 601 (1992) [Erratum APL 61, 2812 (1992)].

1991
6.     A. Zaslavsky, D. C. Tsui, M. Santos, and M. Shayegan, “Resonant tunneling of two-dimensional electrons into one-dimensional subbands of a quantum wire”, Appl. Phys. Lett. 58, 1440 (1991).

1990
5.     A. Zaslavsky, M. R. Frei, and D. C. Tsui, “Liquid phase epitaxial regrowth of two-dimensional electron gas on GaAs patterned by in-situ meltback”, Appl. Phys. Lett. 57, 2455 (1990).
4.     A. Zaslavsky, Yuan P. Li, D. C. Tsui, M. Santos, and M. Shayegan, “Transport in transverse magnetic fields in resonant tunneling structures”, Phys. Rev. B 42, 1374 (1990).
3.     Yuan P. Li, A. Zaslavsky, D.C. Tsui, M. Santos, and M. Shayegan, “Noise characteristics of double-barrier resonant tunneling structures below 10 kHz”, Phys. Rev. B 41, 8388 (1990).

1989
2.     A. Zaslavsky, D. C. Tsui, M. Santos, and M. Shayegan, “Magnetotunneling in double-barrier heterostructures”, Phys. Rev. B 40, 9829 (1989).

1988
1.     A. Zaslavsky, V. J. Goldman, D. C. Tsui, and J. E. Cunningham, “Resonant tunneling and intrinsic bistability in asymmetric double-barrier heterostructures”, Appl. Phys. Lett. 53, 1408 (1988).